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| INTEGRATED CIRCUITS SA2411 +20 dBm single chip linear amplifier for WLAN Product data Supersedes data of 2002 Jul 31 2003 Feb 07 Philips Semiconductors Philips Semiconductors Product data +20 dBm single chip linear amplifier for WLAN SA2411 1. DESCRIPTION The SA2411 is a linear power amplifier designed for WLAN application in the 2.4 GHz band. Together with the SA2400A the chips form a complete 802.11b transceiver. The SA2411 is a Si power amplifier with integrated matching and power level detector. 2. FEATURES * 75 + 25j differential inputs, internally matched * 50 single-ended output, internally matched * 15 dB gain block * Power detector * Bias adjust pin * 18% efficiency at 3 V * RF matching for SA2400A 3. APPLICATIONS * IEEE 802.11 and 802.11b radios * Supports DSSS and CCK modulation * Supports data rates: 1, 2, 5.5, and 11 Mbps * 2.45 GHz ISM band wireless communication devices Table 1. Ordering information PACKAGE TYPE NUMBER SA2411DH NAME TSSOP16 DESCRIPTION plastic thin shrink small outline package; 16 leads; body width 4.4 mm VERSION SOT403-1 4. BLOCK DIAGRAM VDD_DRIVER VDD_BIAS VDD_MAIN IN+ INPUT IN- MATCH PA OUTPUT MATCH ANT Power-up power mode SA2411 SR02383 DETECTOR Figure 1. Block diagram 2003 Feb 07 2 Philips Semiconductors Product data +20 dBm single chip linear amplifier for WLAN SA2411 5. PINNING INFORMATION VDD_MAIN VDD_DRIVER GND IN+ IN- GND DETECTOR GND 1 2 16 VDD_BIAS 15 PWRUP 4 5 6 7 8 SA2411DH 3 14 GND 13 RF_GND 12 ANT 11 GND 10 MODE 9 GND SR02384 Figure 2. Pin configuration Table 2. Pin description PIN type is designated by A = Analog, D = Digital, I = Input, O = Output SYMBOL VDD_MAIN VDD_DRIVER GND IN+ IN- GND DETECTOR GND GND MODE GND ANT RF_GND GND PWRUP VDD_BIAS PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 DESCRIPTION Analog supply, VDD for power amplifier, 150 mA Analog supply, VDD for biasing driver, 35 mA Grounding Input pin, positive part of balanced signal Input pin, negative part of balanced signal Grounding Power detector output Grounding Grounding Mode switch; floating = high gain, grounded = low gain Grounding Output pin, RF, to antenna RF ground must be connected Grounding Power up pin. HIGH = amplifier is on. LOW = amplifier is off. Analog supply, VDD for biasing the amplifier, 5 mA A A A AI AI A AO A A AI A AO A A DI A TYPE All GND pins should be connected to ground to guarantee the best performance. 2003 Feb 07 3 Philips Semiconductors Product data +20 dBm single chip linear amplifier for WLAN SA2411 6. FUNCTIONAL DESCRIPTION The main building-blocks are: * Fixed gain amplifier (PA) * Output matching * Input matching * Power Detector * Power Mode Input The device has differential inputs so a balun is needed in the case of single ended operation, input impedance is approximately 75 + 25j , balanced. The inputs can be DC biased with the pin VDD_DRIVER. The input matching is optimized to interface with the SA2400A WLAN transceiver chip. Amplifier The amplifier is a fixed gain, class AB amplifier. There is an additional pin, VDD_BIAS, to adjust the class A bias current. Reducing the class A currents reduces the gain. This allows trade-offs to be made among gain, linearity and current. Output matching The output of the amplifier is matched, on chip, for a 50 load. The matching includes the supply feed for the power amplifier. The pin VDD_MAIN is the main supply for the amplifier. No additional filtering is needed to meet the 802.11b spec. Power detector The power detector detects the power level and transforms it into a low frequency current. The detector output must be loaded with a resistor to ground for the highest accuracy. This resistor has an optimal value of 5.6 k. Lower values can be used to comply with maximum input sensitivity of ADCs, at the cost of dynamic range. The maximum voltage detected is 2.3 V. Power mode This pin selects the desired gain and linearity level (13 dB or 14.5 dB gain). The low gain is more applicable to high voltage applications from 3.3 V to 3.6 V. The high gain is more applicable to low voltage applications lower than 3.3 V. NOTE: In order to assure optimal thermal performance, it is recommended that all ground pins be connected, and that the number of vias to ground under the chip be maximized. In addition, the use of solder mask under the chip (for scratch protection) is not recommended. 2003 Feb 07 4 Philips Semiconductors Product data +20 dBm single chip linear amplifier for WLAN SA2411 7. CONNECTIVITY DIAGRAM ANT VDD PWRUP R1 L1 PwrUp MODE GND GND GND VDD C1 SA2411 L2 GND GND DET C2 GND VDD VDD IN+ IN- GND ANT Idet. L3 C4 C3 R2 Vdet RFin RFin SR02385 C1, C2, C3 C4 R1 R2 L1, L2, L3 = 5.6 pF = 10 nF = optional connect to ground via 0 W resistor. = optional resistor to ground to convert current into voltage = Optional inductors 1 nH ... 10 nH, or microstrip lines with length 1 ... 10 mm. No inductors and directly connecting all supplies to VDD might cause problems. The optimal values of the inductors depends on the application board. 2003 Feb 07 5 Philips Semiconductors Product data +20 dBm single chip linear amplifier for WLAN SA2411 8. OPERATION The SA2411 linear amplifier is intended for operation in the 2.4 GHz band, specifically for IEEE 802.11 1 and 2 Mbits/s DSSS, and 5.5 and 11 Msymbols/s CCK standards. Throughout this document, the operating RF frequency refers to the ISM band between 2.4 and 2.5 GHz. Amplifier Output Power The SA2411 linear amplifier is designed to give at least 19 dBm output power for an 11 Msymbols/s CCK modulated input carrier. At 19 dBm output power the ACPR specs are met. The fixed gain amplifier amplifies the input signal by 14.5 dB typically. Power Mode The biasing can be adjusted to change the gain and therefore the maximum linear output power. For high supply voltages (>3.2 V) the low-gain mode is advised. For low supply voltages (<3.3 V) the high-gain mode is advised. Power Mode High Low Pin 9 = Floating Grounded Typical output power 20.0 dBm 20.0 dBm Typical small signal Gain 14.5 dB 13 dB Typical DC current (no RF signal) 35 mA 28 mA Typical Current consumption 185 mA @ 20 dBm 185 mA @ 20 dBm Power detector The power detector current output is linear proportional with the RF output voltage. The RF output power is quadratic proportional to the RF output voltage. Therefore, the detector is quadratic proportional to the output power. The following relation can be expressed: P out + k V ndetector Pout is output power in mWatt, Vdetector is detector voltage in Volt, k = sensitivity in mWatt/V2, n = quadratic factor. The quadratic factor is 1.5. The sensitivity is then 49 mWatt/V2. Pout 20 dBm = 100 mW 19 dBm = 79 mW 17 dBm = 50 mW 15 dBm = 32 mW 9 dBm = 8 mW Vdetector (5.6 k load) 1.7 V 1.4 V 1.0 V 0.7 V 0.3 V Idetector (5.6 k in series) 300 uA 250 uA 175 uA 125 uA 50 uA The loading of the detector can be different in the application. The highest accuracy is achieved with 5.6 k. But other values can be used to adapt to the maximum input sensitivity of other circuits. Other detector loading values result in other k-factors. The maximum detector voltage is limited to about 2.4 V. DC feed at input There is a possibility to add a DC voltage at the input pins (pin 4 and pin 5) by feeding pin 2. This option should be used in case the SA2411 is lined up with the SA2400A. 2003 Feb 07 6 Philips Semiconductors Product data +20 dBm single chip linear amplifier for WLAN SA2411 9. OPERATING CONDITIONS The SA2411 shall meet all of the operating conditions outlined in this section. Table 3 specifies the absolute maximum ratings for the device. Table 4 gives the recommended operating conditions. Table 3. Absolute maximum ratings Symbol Tstg VDDa - - Parameter Storage temperature Supply voltage (analog) Voltage applied to inputs Short circuit duration, to GND or VDD Min -55 -0.5 -0.5 - Max +150 +3.85 VDD+0.5 1 Unit C V V sec Table 4. Recommended operating conditions Symbol Tamb VDDa Parameter Ambient operating temperature Supply voltage (analog) Min -40 2.85 Nom - 3.3 Max +85 3.6 Units C V 10. SA2411 TRANSMITTER REQUIREMENTS Table 5. SA2411 transmitter specifications Tamb = 25 C; VCC = 3 V; frequency = 2.45 GHz, Rdetector = 5.6 k, unless otherwise stated. Specification DC DC current DC current Leakage current AC : 802.11b MODULATION Output back off RF frequency Input impedance Load impedance Differential (75 + 25j ) Single ended (relative to 1 dB compression of single carrier) - 2.4 - - 2 2.45 100 50 - 2.5 - - dB GHz Standard mode (pin 10 is floating) Low output power mode (pin 10 is grounded) Vpwrup = 0 V. Vss = 3.0 V - - - 35 28 - - - 10 mA mA A Condition, Remarks Min Nom Max Units Power gain for small signal Power gain for small signal Mode = High gain, Input level = -20 dBm Mode = Low gain, Input level = -20 dBm - - 14.5 13 - - dB dB Output power Current consumption Gain Output power Current consumption Gain Meeting the FCC specs of 30 dBc and 50 dBc, mode = high " " Meeting the FCC specs of 30 dBc and 50 dBc, mode = low " " - - - - - - +20.0 200 12.5 +20.0 200 12.5 - - - - - - dBm mA dB dBm mA dB s s % dB dBc Power ramping up time Power ramping down (when enabled) Error Vector Magnitude Isolation Harmonic Suppression at 2 and 3 times fundamental frequency 10% to 90% ramp up a) b) 90% to 10% ramp down 10% to carrier leakage level - - - - - 0.5 0.5 0.5 5 15 40 - - - - - 11 Msymbols/s QPSK. Both RF outputs. Pin 15 (PWRUP) = 0 V fundamental frequency output power = +20 dBm 2003 Feb 07 7 Philips Semiconductors Product data +20 dBm single chip linear amplifier for WLAN SA2411 Table 6. SA2411 Detector specification Tamb = 25 C, VCC = 3.0 V Specification GENERAL Detector sensitivity Detector accuracy per sample Absolute accuracy Detector quadratic factor Detector settling time Spread from sample to sample Absolute detector voltage Absolute detector voltage error Detector power range From 10% to 90% of final value 20 dBm output power 19 dBm output power From -30 C to +80 C; from 2.7 V to 3.6 V at 19 dBm output power With 5 k load resistor to ground At 16 dBm -40 C to +80 C; from 2.7 V to 3.6 V From sample to sample - - - - - - - - +10 49 0.3 0.5 1.5 500 1 1.4 0.15 - - - - - - - - - +21 mW/V2 dB dB - ns dB V V dBm Condition, Remarks Min Nom Max Units 11. GRAPHS The following graphs are only for a typical sample measured on a SA2411 test board under nominal condition applying an 11Mb/s CCK 802.11b modulation. Corrections for input, output and supply losses have been applied. The dotted lines represent the low gain mode. The solid lines are for the high gain mode. The first two graphs are small signal graphs. The gain and the DC currents are plotted versus supply voltage. DC current versus Supply Voltage 50 18.0 Gain versus Supply Voltage small signal current[mA]] Small signal gain[dB]] 40 16.0 30 14.0 20 12.0 10 2.7 2.9 3.1 Supply Voltage[V] 3.3 3.5 10.0 2.7 2.9 3.1 Supply Voltage[V] 3.3 3.5 SR02464 SR02465 Figure 3. DC current vs. supply voltage Figure 4. Gain vs. supply voltage 2003 Feb 07 8 Philips Semiconductors Product data +20 dBm single chip linear amplifier for WLAN SA2411 The next eight graphs are presenting the power sweep for both gain modes at nominal conditions. Output Power versus Input Power 22 20 18 16 14 12 10 -4 -2 0 2 Pin[dbm] 4 6 8 Efficiency @ 2.7Volt 25.0% Efficiency versus Output Power 20.0% Pout[dBm] 15.0% 10.0% 5.0% 0.0% -2 2 6 10 Pout[dbm] 14 18 22 SR02466 SR02468 Figure 5. Output power vs. input power Figure 7. Efficiency vs. output power Gain versus Output Power 16 200 Current consumption [mA] Current consumption vs Output Power 15 Gain[dB] 150 14 100 13 50 12 5 10 Pout[dbm] 15 20 0 -10 -6 -2 2 6 10 14 18 22 SR02467 Pout[dbm] SR02469 Figure 6. Gain vs. output power Figure 8. Current consumption vs. output power 2003 Feb 07 9 Philips Semiconductors Product data +20 dBm single chip linear amplifier for WLAN SA2411 ACPR versus Output Power -25 Detector Voltage versus Output Power 2 -30 ACPR[dBc] Detector[V] 1.5 -35 1 -40 0.5 -45 7 12 Pout[dbm] 17 22 0 8 10 12 14 16 18 20 22 Pout[dbm] SR02470 SR02472 Figure 9. ACPR vs. output power Figure 11. Detector voltage vs. output power ALT versus Output Power -46 Detector Error versus Output Power 1.0 Detector error[dB] -50 ALT[dBc] 0.5 -54 0.0 -58 -0.5 -62 7 12 Pout[dbm] 17 22 -1.0 7 12 Pout[dbm] 17 22 SR02471 SR02473 Figure 10. ALT vs. output power Figure 12. Detector error vs. output power 2003 Feb 07 10 Philips Semiconductors Product data +20 dBm single chip linear amplifier for WLAN SA2411 The next curves present the frequency dependency for an input power of +7 dBm: Output Power versus Frequency 21 Efficiency versus Frequency 20.0% Output Power[dBm] 20 Eficiency[%] 2.43E+00 2.45E+00 2.48E+00 2.50E+00 15.0% 19 10.0% 18 5.0% 17 2.40E+00 0.0% 2.40E+00 2.43E+00 2.45E+00 2.48E+00 2.50E+00 Frequency[GHz] SR02474 Frequency[GHz] SR02476 Figure 13. Output power vs. frequency Figure 15. Efficiency vs. frequency Gain versus Frequency 15 ACPR versus frequency -28 14 ACPR[dBc] Gain[dB] -30 13 -32 12 -34 11 2.40E+00 2.43E+00 2.45E+00 2.48E+00 2.50E+00 -36 2.40E+00 2.43E+00 2.45E+00 2.48E+00 2.50E+00 Frequency[GHz] Frequency[GHz] SR02475 SR02477 Figure 14. Gain vs. frequency Figure 16. ACPR vs. frequency 2003 Feb 07 11 Philips Semiconductors Product data +20 dBm single chip linear amplifier for WLAN SA2411 ALT versus Frequency -48 1.0 Detector Errror versus Frequency -50 Detector Error[dB] 0.5 ALT[dBc] -52 0.0 -54 -0.5 -56 2.40E+00 2.43E+00 2.45E+00 2.48E+00 2.50E+00 -1.0 2.40E+00 2.43E+00 2.45E+00 2.48E+00 2.50E+00 Frequency[GHz] Frequency[GHz] SR02478 SR02480 Figure 17. ALT vs. frequency Figure 19. Detector error vs. frequency Detector Voltage versus Frequency 2 1.5 Detector voltage[V] 1 0.5 0 2.40E+00 2.43E+00 2.45E+00 2.48E+00 2.50E+00 Frequency[GHz] SR02479 Figure 18. Detector voltage vs. frequency 2003 Feb 07 12 Philips Semiconductors Product data +20 dBm single chip linear amplifier for WLAN SA2411 The last 5 curves are characterization data for supply voltage, temperature and power. The worst-case scenario is the combination of highest temperature/lowest supply. The best-case scenario is the combination of lowest temperature and highest supply voltage. The data has been taken using a non-modulated carrier at 2.5 GHz. 50.00 DC current [mA] 45.00 40.00 35.00 30.00 0 25 70 85 Efficiency [%] 28.00 26.00 24.00 22.00 20.00 25.00 2.8 3.0 3.2 3.4 3.6 2.8 Supply Voltage [V] SR02481 Figure 20. DC current vs. supply voltage, mode = high Figure 23. Efficiency vs. supply voltage, mode = high Detector Error [dB] 17.00 16.00 Gain [dB] 15.00 14.00 0.50 0.25 0.00 -0.25 -0.50 -30 0 25 70 85 13.00 2.8 3.0 3.2 3.4 3.6 2.8 Supply Voltage [V] SR02482 Figure 21. Gain vs. supply voltage, mode = high Figure 24. Detector error vs. supply voltage, mode = high 19.00 18.00 17.00 Figure 22. Output power vs. supply voltage, mode = high 2003 Feb 07 II I IIIIII III I II IIIIIIIIIIIII I I III I IIIIII IIIIIIIIIIIII IIIIIIIIII 20.00 Pout [dBm] -30 0 25 70 85 2.8 3.0 3.2 3.4 Supply Voltage [V] 3.6 SR02483 13 I II I IIIIIIIIIIII IIIIIIIIII IIIIIIIII I II I II II IIIIIII 3.0 3.2 3.4 3.6 Supply Voltage [V] -30 30.00 II II IIIIIIIIIIII IIIIIIIIII I IIIIII I IIIIII I II I II I I II II I I I I IIIIIII III IIIIIIIIIIIII I I IIII III III IIIIIIIIII III III I IIIIII III I I IIIIIIII IIIIIIIIIII I III IIIIIIIIIIIII IIIIIIII IIIIII -30 0 25 70 85 SR02484 -30 0 25 70 85 3.0 3.2 3.4 3.6 Supply Voltage [V] SR02485 Philips Semiconductors Product data +20 dBm single chip linear amplifier for WLAN SA2411 12. APPLICATION WITH THE SA2400A Next diagram is the application of the SA2400A with the SA2411. The interface is simple. Two equal microstrip lines connect the SA2400A with the SA2411. The length of this connection should be kept to a minimum. The supply for the open collectors of the SA2400A is provided via pin 2 of the SA2411. C2 is for supply voltage decoupling. RF connection VDD PWRUP Other connection VDD_BIAS RF_GND PWRUP MODE 10 GND GND 16 15 14 13 12 11 GND 9 7 8 GND SA2411 1 VDD_MAIN VDD_DRIVER 2 GND 3 IN+ 4 IN- ANT 5 6 DETECTOR GND C2 Idetector TX_OUT_HI_M TX_OUT_HI_P TX_OUT_LO 3-WIRE BUS A_GND SDATA A_GND A_GND 48 AGCRESET AGCSET IDCOUT A_GND 1 2 3 47 46 45 44 43 42 41 40 39 38 37 36 35 34 TX/RX TX_IN_I_P/ TX_DATA_I TX_IN_I_M/ TX_DATA_Q TX_IN_Q_P TX_IN_Q_M 33 TX_HI A_V DD SA2400A 4 SCLK SEN SR02487 Figure 25. NOTE: A suggested starting point for designing the coupled microstrip lines: Length = 1/18 . Width = 12 mils, Separation = 5 mils with the Dielectric constant = 4.6. This should result in Zeven = 150 , Zo = 75 , and Zodd = 30 . There should be no ground plane under the microstrip lines. 2003 Feb 07 14 Philips Semiconductors Product data +20 dBm single chip linear amplifier for WLAN SA2411 TSSOP16: plastic thin shrink small outline package; 16 leads; body width 4.4 mm SOT403-1 2003 Feb 07 15 Philips Semiconductors Product data +20 dBm single chip linear amplifier for WLAN SA2411 REVISION HISTORY Rev _3 Date 20030207 Description Product data (9397 750 10825); ECN 853-2346 29486 of 07 February 2003; supersedes Preliminary data SA2411 revision 2 of 31 July 2002 (9397 750 10166). * Features (Section 2.) - First bullet: from "75 " to "75 + 25j " - delete bullet "1 dB attenuator" Modifications: * Block diagram: signal "Power mode" changed to "Power-up power mode". * Pin names modified. * Functional description (Section 6.), Power mode: from "(14 dB or 14.5 dB gain)" to "(13 dB or 14.5 dB gain)". * Typical small signal Gain (HIGH) changed from 15 dB to 14.5 dB; (LOW) changed from 14 dB to 13 dB. * Input impedance (nom) changed from 200 to 100 ; Condition changed from "differential (100 + 100 )" to "differential (75 + 25j )" * Gain (nom) changed from 13.0 dB to 12.5 dB. * Output power (nom) changed from +20.5 to +20.0. * Figures 20 through 24 modified. * Note added below Figure 25. _2 _1 20020731 20020723 Preliminary data (9397 750 10166). Preliminary data (9397 750 10144). 2003 Feb 07 16 Philips Semiconductors Product data +20 dBm single chip linear amplifier for WLAN SA2411 Data sheet status Level I Data sheet status [1] Objective data Product status [2] [3] Development Definitions This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products--including circuits, standard cells, and/or software--described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 (c) Koninklijke Philips Electronics N.V. 2003 All rights reserved. Printed in U.S.A. Date of release: 02-03 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. Document order number: 9397 750 10825 Philips Semiconductors 2003 Feb 07 17 |
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